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Instrument Database:
LLA Instruments GmbH - LIPAN 3001 Laser-Plasma-Analyzer
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| Year of introduction |
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| Status |
historical ( out of sale ) |
| Company |
LLA Instruments GmbH
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| Categories |
Spectrometer ( Atom. ): AES: LIBS
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The LIPAN devices detect the composition of solid and liquid samples by LIBS – Laser Induced Breakdown Spectroscopy. A laser beam focussed to the sample surface evaporates a tiny amount of the sample and excites it to the plasma. The light emitted from the plasma contains relevant spectral lines, emitted from the atoms and ions contained in the material. The measurement of the spectral lines describes the elemental composition in the plasma and resulting in the material itself. For a simultaneous detection of all relevant elements and to avoid spectra overlay a spectral range fro 200 – 780 nm is detected with a resolution of a few pm. This extraordinary high reoslution is obtained by using a special Echelle spectrometer, in combination with an intensified CCD-camera system.
The measuring principle pemits the detection of main and trace elements within a few seconds. The use of a laser for excitation permits the analysis of all material without time consuming sample preparation. Protective gas is not required.
LIPAN generally consist of:
- Sample chamber
- Q-switched Nd:YAG-laser for sample excitation
- Optics for focussing the laser beam onto the sample surface and for collimation of the light emitted from the plasma
- UV-VIS-Echelle spectrometer with ICCD-camera
- Framegrabber with analog-digital-converter for ultrafast storage of images
- Fast-pulse-generator for control and synchronization of ultra-fast measuring process
- Industrial PC and interfaces for periphery devices and network integration
- Operational software for device control and data collection, based on WINDOWS
- Analytical software for dialog controlled and automatic qualitative and quantitativen analysis, based on WINDOWS (Applications: Metal Alloys, Glas, Food Analysis, Contaminants in Wood)
Functionality
- Mobile system with integrated sample chamber.
- All components including industrial laser included in compact housing (see picture).
- Also applicable for field measurements on-the-spot.
- Automatic analysis after placement of the material into the sample chamber.
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| Specifications |
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Sample chamber:
Plasma excitation and emission measurement in one optical axis; emission measurement using mirror optics for solid samples. (Dimension 200 x 140 x 360 mm (w x h xd),
No sample preparation.
Measurement under normal atmosphere.
Excitation source:
Q-switched Nd:YAG-laser; pulse length 6 ns; repetition rate 10 Hz
UV-VIS-Echelle-spectrometer:
Spectral range 200 to 780 nm simulatneously measured; linear dispersion 5 pm at 200 nm to 19 pm at 780 nm
Image intensifier and CCD-camera:
CCD-Array Kodak KAF-1001 (1024x1024 pixel) with gateable iage intensifier (MCP); temporal resolution approximately 20 ns; on-chip integration time for photo electrons up to 3 min. Double correlated sampling, stabilization of temperature
Framegrabber with ADC:
16 bit ADC; frequency 500 kHz; programmable line and pixel binning
Fast pulse generator:
Programmable TTL-pulse generation for temporal control f laser and camera; laser shot control; control of image intensifier of the ICCD camera, line binning
Controller:
Processor AMD K6-3, 550 MHz; RAM 128 MB; HDD min. 20 GB; Floppy drive 3 ½’’; 1 MB Video-RAM, built-in VGA-LCD-display (10.4-TFT’’); built-in keyboard with mouse
Interfaces:
external monitor, printer, Ethernet
Detection limit:
typically 1 to 100 ppm, depending on the element
Time for measurement and analysis:
> 3 s
Environmental temperature:
10 C to 30 C
Voltage supply:
220 V, 16 A, 50 / 60 Hz (optional 110/120 V, 60 Hz)
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